Schematic illustration of a spin-orbit torque MRAM cell, where a tungsten layer generates spin currents to change the magnetic state. Credit: Yen-Lin Huang, NYCU.
The ability to reliably change the direction of magnetic alignment in materials, a process known as magnetization switching, is known to be essential to the operation of most memory devices. One known strategy involves creating a rotational force (i.e., torque) on the electron spins via an electric current; a physical effect known as spin-orbit torque (SOT).
Information storage devices that rely on this effect are called spin-orbit-coupled magnetic random-access memories (SOT-MRAM). These memory systems have various notable advantages, such as the ability to retain data even when their power supply is removed, fast switching compared to other existing memory solutions, and low power consumption.
Researchers from National Yang Ming Chiao Tung University, Taiwan Semiconductor Manufacturing Company, Industrial Technology Research Institute and other institutes recently developed a new SOT-MRAM based on composite materials containing tungsten, a heavy metal known for its strong spin-orbit coupling. Their memory device, presented in an article published in Natural electronicscould be manufactured via existing processes for large-scale semiconductor production.
“Our motivation came from the need for truly low-power, high-speed, reliable memory to support next-generation computing,” Yen-Lin Huang, first author of the paper, told Tech Xplore. “While spin-orbit torque MRAM had been proposed for a long time, the challenge was to demonstrate nanosecond switching, long retention, and large-scale integration in processes compatible with the semiconductor industry.”
The main goal of the recent study by Huang and colleagues was to develop an MRAM that could simultaneously achieve speed and endurance, but could also be manufactured using processes widely used in the electronics industry. The memory device they created stores information in the direction of magnetization of a thin ferromagnetic layer.
Professor Huang’s research team from National Yang Ming Chiao Tung University. Credit: Yen-Lin Huang, NYCU.
“Instead of using a magnetic field, we use a spin-orbit pair: a current passing through a tungsten layer generates spins that reverse the magnetization in about 1 ns,” Huang explained.
“Compared to DRAM and Flash, our MRAM combines non-volatility (like Flash) with nanosecond speed (like DRAM), but with much lower power consumption and no need for refresh cycles. The unique aspect here is to stabilize the tungsten phase to provide both high rotational efficiency and industry-ready integration.
The researchers made a prototype of their memory, with a 64 kilobit (kb) matrix, then evaluated its performance under conditions aligned with real applications. It was found that SOT-MRAM achieves a remarkable switching speed of 1 ns and a retention time of over 10 years.
“We stabilized a phase of tungsten that is typically difficult to control but crucial for spinning efficiency up to 700°C,” Huang said. “Our study shows that SOT-MRAM can be scaled to on-chip cache and embedded memory, enabling energy-efficient AI and edge computing where speed and non-volatility matter.”
Recent work by Huang and co-workers may open new possibilities for scalable, large-scale manufacturing of high-performance SOT-MRAMs based on β-phase tungsten. In the future, other research teams could build on this study to develop other memory systems that are fast, stable and compatible with existing manufacturing processes.
“We now aim to move beyond proof-of-concept arrays toward megabit-class integration, while further reducing write current to sub-picojoule/bit levels,” Huang added. “On the physics side, we are exploring new oxide and 2D interfaces to push efficiency and reliability even further. Another direction is system-level demonstrations, showing how MRAM can reduce the total power of AI accelerators and mobile devices.”
Written for you by our author Ingrid Fadelli, edited by Gaby Clark, and fact-checked and revised by Robert Egan, this article is the result of painstaking human work. We rely on readers like you to keep independent science journalism alive. If this reporting interests you, consider making a donation (especially monthly). You will get a without advertising account as a thank you.
More information:
Yen-Lin Huang et al, A 64 kilobit spin-orbit torque magnetic RAM based on end-of-line compatible β-tungsten, Natural electronics (2025). DOI: 10.1038/s41928-025-01434-x.
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