Tungsten-based SOT-MRAM enables nanosecond switching and low-power data storage
Schematic illustration of a spin-orbit torque MRAM cell, where a tungsten layer generates spin currents to change the magnetic state. ...
Schematic illustration of a spin-orbit torque MRAM cell, where a tungsten layer generates spin currents to change the magnetic state. ...
Fabrication and characterization of c-Al2O3. Credit: Nature (2024). DOI: 10.1038/s41586-024-07786-2 A team of electrical and computer engineers from the Shanghai ...
Hot emitter transistor based on stimulated emission of heated carriers. Credit: IMR Transistors, the basic building blocks of integrated circuits, ...
© 2023 Manhattan Tribune -By Millennium Press
© 2023 Manhattan Tribune -By Millennium Press