The characteristics of 0D vdW interfacial ferroelectricity. Credit: Natural communications (2023). DOI: 10.1038/s41467-023-41045-8
Recent research has broken the size limit of traditional ferroelectric effects, providing experimental evidence and theoretical simulations to confirm that a structure containing as few as 5,000 atoms can still exhibit solid-state ferroelectric effects.
The studies, carried out by a joint team from Israel and China, are published in Natural electronics And Natural communications under the titles “Zero-Dimensional Ferroelectricity” and “0D van der Waals Interfacial Sliding Ferroelectricity”, respectively.
The ferroelectric effect is a physical phenomenon discovered at the beginning of the 20th century by Joseph Valasek and constitutes an important technological avenue for achieving information storage. Traditional ferroelectric effects are subject to size limitations.
“When the size of traditional ferroelectric materials decreases, the significant influence of the depolarization field can make the original polarization characteristics disappear,” explain Professors Guo Yao and Alla Zak. “This size effect limits the application of ferroelectric materials in high-density storage devices.”
Professor Guo Yao of Beijing Institute of Technology, Professor Alla Zak of Holon Institute of Technology and their collaborators used tungsten disulfide nanotubes to construct an interface with around 5,000 atoms at the nanoscale , and observed resistance changes and hysteresis phenomena in nanoscale ferroelectric diodes. interface.
Through further experimental and theoretical verification, it was confirmed that the electrical behavior of the ferroelectric diode was due to lattice slip at the interface, allowing the device to produce resistance changes suitable for information storage and programmable photovoltaic responses over almost the entire wavelength range of visible light. . “We are surprised that an interface system of 5,000 atoms can produce such rich functionality,” the researchers say.
Professor Reshef Tenne, of the Weizmann Institute of Science in Israel and co-author of this study, believes that this reduced ferroelectricity has important advantages for future high-density information storage. He also believes that this research is of great importance for reducing the size of ferroelectric devices.
More information:
Yue Niu et al, 0D van der Waals interfacial ferroelectricity, Natural communications (2023). DOI: 10.1038/s41467-023-41045-8
Yan Sun et al, Mesoscopic sliding ferroelectricity enabled photovoltaic random access memory for machine vision system at hardware level, Natural communications (2022). DOI: 10.1038/s41467-022-33118-x
Katharina Zeissler, Ferroelectricity in zero dimension, Natural electronics (2023). DOI: 10.1038/s41928-023-01085-w
Provided by Beijing University of Science and Technology
Quote: 5,000 atoms are enough: The smallest ferroelectricity in the solid state (February 16, 2024) recovered on February 16, 2024 from
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